SeCoS Halbleitertechnologie GmbH 2SD2045
NPN-PNP Transistors
ABSOLUTE MAXIMUM RATINGS
OF TR1 and TR2 @Ta = 25°C Parameter Symbol Value TR1 (NPN) TR2 (PNP) Collector to Base Voltage VCBO 40 -40 Collector to Emitter Voltage VCEX 40 -40 Collector to Emitter Voltage VCEO 30 -30 Emitter to Base Voltage VEBO 7 -7 Collector Currrent – Continuous IC 1.5 -1.5 Collector Current- Peak ICM 5 -5 Collector Power Dissipation PC 350 350 Thermal Resistance from Junction to Ambient RθJA 357 357 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Unit V V V V A A mW °C / W °C °C 19-Nov-2013 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente 2SD2045 NPN - PNP Plastic-Encapsulate TransistorsELECTRICAL CHARACTERISTICS
OF TR1 (NPN Transistor) @Ta = 25°C Parameter Test Condition Symbol Min. Typ. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector cut-off current Emitter Cutoff Curre...