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2SD669AT Datasheet PDF

SeCoS Halbleitertechnologie GmbH 2SD669AT

NPN Transistor

Part No. 2SD669AT
Datasheet 2SD669AT Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description NPN Transistor
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2SD669AT datasheet page 1 preview

FEATURES

Low frequency power amplifier RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free CLASSIFICATION OF hFE Product-Rank 2SD669AT-B Range 60~120 2SD669AT-C 100~200 TO-126 1Emitter 2Collector 3Base Collector 2 3 Base 1 Emitter

ABSOLUTE MAXIMUM RATINGS

(TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage VCBO VCEO Emitter to Base Voltage Continuous Collector Current VEBO IC Collector Dissipation Junction and Storage Temperature PC TJ, TSTG REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 Rating 180 160 5 1.5 1 150, -55~150 Unit V V V A W °C

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector to Base Breakdown Voltage V(BR)CBO 180 - - Collector to Emitter Breakdown Voltage V(BR)CEO 160 - - Emitter...
2SD669AT page 2 preview