SeCoS Halbleitertechnologie GmbH 2SD669AT
NPN Transistor
FEATURES
Low frequency power amplifier RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free CLASSIFICATION OF hFE Product-Rank 2SD669AT-B Range 60~120 2SD669AT-C 100~200 TO-126 1Emitter 2Collector 3Base Collector 2 3 Base 1 EmitterABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage VCBO VCEO Emitter to Base Voltage Continuous Collector Current VEBO IC Collector Dissipation Junction and Storage Temperature PC TJ, TSTG REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 Rating 180 160 5 1.5 1 150, -55~150 Unit V V V A W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector to Base Breakdown Voltage V(BR)CBO 180 - - Collector to Emitter Breakdown Voltage V(BR)CEO 160 - - Emitter...