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40N03 - N-Channel Enhancement Mode PowerMos FET

General Description

The SID40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Repetitive Avalanche Rated.
  • Dynamic dv/dt Rating.
  • Simple Drive Requirement.
  • Fast Switching TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.1 Dimensions in millimeters D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Stor.

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Full PDF Text Transcription (Reference)

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SID40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-251 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Repetitive Avalanche Rated * Dynamic dv/dt Rating * Simple Drive Requirement * Fast Switching TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.