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40N03 Datasheet N-channel Enhancement Mode Powermos Fet

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SID40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.

General Description

The SID40N03 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-251 is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Key Features

  • Repetitive Avalanche Rated.
  • Dynamic dv/dt Rating.
  • Simple Drive Requirement.
  • Fast Switching TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.1 Dimensions in millimeters D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Stor.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Advanced Power Electronics Logo 40N03GP N-channel Enhancement-mode Power MOSFET Advanced Power Electronics
Silicon Standard Logo 40N03P SSM40N03P Silicon Standard

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Part Number Description

40N03 Distributor