SeCoS Halbleitertechnologie GmbH BAS40Z
Small Signal Schottky Diode
FEATURES
♦ Low Forward Voltage Drop ♦ Fast Switching MARKING KAN A B J D CF GH E REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified. TYPE NUMBER Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction & Storage Temperature SYMBOL VRM VR IO PD RθJA TJ, TSTG VALUE 40 40 200 150 833 -55~125, -65~150 UNIT V V mA mW °C/W °CMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified. PARAMETER Reverse Breakdown Voltage Reverse Voltage Leakage Current Forward Voltage Total Capacitance Reverse Recovery Time SYMBOL V(BR) IR VF CT trr MIN 40 MAX 200 380 1000 5 5 UNIT V nA mV mV pF nS TEST CONDITION IR= 10µA VR=30V IF=1mA IF=40mA VR=0, f=1MHz IF=10mA,IR=IF=1mA,RL=100Ω 17-Nov-2009 Rev.