SeCoS Halbleitertechnologie GmbH BAS70DW-04
Schottky Barrier Diode
FEATURES
♦ Low Forward Voltage Drop ♦ Fast Switching SOT-363 A E L B F CH DG K J REF. A B C D E F Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP.MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified. TYPE NUMBER SYMBOL Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Peak Forward Surge Current @<1.0s Power Dissipation Thermal Resistance Junction to Ambient Air Storage Temperature VRRM VRWM VR IF IFSM PD RθJA TSTG VALUE 70 70 70 70 100 200 625 -55~150 UNIT V V V mA mA mW °C/W °CMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified. PARAMETER SYMBOL MIN MAX Forward Voltage Reverse Current Capacitance between Terminals VF1 - 0.41 VF2 - 1 IR - 100 CT - 2 Reverse Recovery Time trr - 5 17-Nov-2009 Rev. A UNIT V...