SeCoS Halbleitertechnologie GmbH BAT54P
Plastic-Encapsulate Diodes
MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol DC Blocking Voltage VR RMS reverse Voltage VR(RMS) Average Rectified Output Current IO Forward continuous Current IF Repetitive peak Forward Current IFRM Forward Surge Current@ t<1s IFSM Power Dissipation Pd Thermal Resistance Junction to Ambient Air RθJA Junction Temperature, Storage Temperature TJ, TSTG Ratings 30 21 100 200 300 600 500 200 125, -55~150 Unit V V mA mA mA mA mW °C/W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Reverse Breakdown Voltage V(BR)R 30 -V - 240 - 320 Forward Voltage VF - 400 mV - 500 - 1000 Peak Reverse Current IR - 2 µA Reverse Recovery Time tRR - 5 ns Capacitance between Terminals CT - 10 pF Teat Conditions IR = 100µA IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V IF=10mA, IR=10mA~1mA RL=100Ω VR=1V, f=1MHz 04-Feb-2013 Rev. B Page 1 of 2 Elektronische Bauelemente RATINGS AND CHARACTERISTIC CURVES BAT54P Plastic-Encapsulate Diodes 04-Feb-2013 Rev.