BC848C Datasheet | SeCoS Halbleitertechnologie GmbH

FEATURES n General Purpose Transistor NPN Type n Collect current : 0.1A n Operating Temp. : -55OC ~ +150OC n Ro HS pliant product C OLLE C TOR 3 1 B AS E 2 E MITTE R 1 2 Top View C D HK SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅ Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage BC846 BC847 BC848 BC846 BC847 BC848 VCBO Ic= 10 ­Aˈ IE=0 VCEO Ic= 10 m Aˈ IB=0 80 50 30 65 45 30 Emitter-base breakdown voltage Collector cut-off current Collector cut-off current BC846 BC847 BC848 BC846 BC847 BC848 VEBO ICBO ICEO IE= 10 ­Aˈ IC=0 VCB= 70 V , VCB= 50 V , VCB= 30 V , VCE= 60 V , VCE= 45 V , VCE= 30 V , IE=0 IE=0 IE=0 IB=0 IB=0 IB=0 Emitter cut-off current IEBO VEB= 5 V , IC=0 DC current gain BC846A,847A,848A BC846B,847B,848B BC847C,BC848C HFE˄1˅ VCE= 5V, IC= 2m A 110 200 420 Collector-emitter saturation voltage VCE(sat) IC=100m A, IB= 5 m...