SeCoS Halbleitertechnologie GmbH BC848CW
NPN Transistor
FEATURES
● Ideally suited for automatic insertion● For Switching and AF Amplifier
APPLICATIONS
Base Emitter●Collector MARKING BC846AW=1A;BC846BW=1B; BC847AW=1E;BC847BW=1F;BC847CW=1G; BC848AW=1J;BC848BW=1K;BC848CW=1L Collector
● Base Emitter SOT-323 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 -0.650 TYP.
ABSOLUTE MAXIMUM RATINGS
( TA = 25°C unless otherwise noted ) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature BC846W BC847W BC848W BC846W BC847W BC848W BC846W BC847W BC848W SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 80 50 30 65 45 30 6 6 5 0.1 150 150, -55 ~ 150 UNIT V V V A mW ℃ 24-Mar-2010 Rev. A Page 1 of 4 Elektronische Bauelemente BC846AW,BW BC847AW, BW, CW BC848AW, BW, CW NPN Plasti...