SeCoS Halbleitertechnologie GmbH BC857S
PNP Silicon Multi-Chip Transistor
| Part No. | BC857S |
|---|---|
| Datasheet | BC857S Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Silicon Multi-Chip Transistor |
| Buy | Stock & Price |
FEATURES
Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -50 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150 CO C 1 B2 E2 .055(1.40) .047(1.20) SOT-363 .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Marking : 3C E 1 B1 C2 Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
( Tamb=25OC unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 Emitter-base breakdown voltage Collector cut-off current V(BR)EBO ICBO IE=-10µA, IC=0 VCB=-30V, IE=0 DC current gain hFE VCE=-5V, IC=-2mA Collector-emitter saturation voltage VCE(sat) VCE(sat) IC=-10mA, IB=-0.5mA I C=-100mA, IB=-5mA Base-emitter volt...