SeCoS Halbleitertechnologie GmbH BCP5401
PNP Transistor
FEATURES
● Switching and amplification in high voltage● Low current
● High voltage MARKING 5401 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch Collector Base
● Emitter SOT-89 123 A EC 4 B F G H J D K L REF. A B C D E F Millimeter Min. 4.40 3.94 1.40 2.25 Max. 4.60 4.25 1.60 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. 0.40 1.50 3.00 0.32 Max. 0.58 TYP TYP 0.52 0.35 0.44
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current-Continuous IC Collector Power Dissipation PC Thermal Resistance Junction to Ambient RθJA Junction and Storage temperature TJ, TSTG Rating -160 -150 -5 -0.5 0.5 250 150, -55~150 Unit V V V A W °C/W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-Base Breakdown Voltage V(BR)CBO -160 - - Collector-Emitter Breakdown Voltage V(BR)CEO -150 - - Emitter-Bas...