SeCoS Halbleitertechnologie GmbH BCP5551
NPN Silicon Medium Power Transistor
| Part No. | BCP5551 |
|---|---|
| Datasheet | BCP5551 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Silicon Medium Power Transistor |
| Buy | Stock & Price |
FEATURES
● Switching and amplification in high voltage● Low current
● High voltage MARKING 1G6 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch SOT-89 4 123 A EC B F G H J D K L REF. A B C D E F Millimeter Min. 4.40 3.94 1.40 2.25 Max. 4.60 4.25 1.60 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. 0.40 1.50 3.00 0.32 Max. 0.58 TYP TYP 0.52 0.35 0.44
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current-Continuous IC Collector Power Dissipation PD Junction and Storage Temperature TJ, TSTG Rating 180 160 6 600 0.5 150, -55~150 Unit V V V mA W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage Collector-emitter breakdown V(BR)CBO V(BR)CEO 180 160 - - Emitter-base breakdown voltage V(BR)EBO 6 - - Collector cut-off current ICBO - - 50 Emitter cut-off current IE...