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BCP669A Datasheet NPN Epitaxial Planar Transistor

Manufacturer: SeCoS Halbleitertechnologie GmbH

General Description

Low Frequency Power Amplifier Designed for General High Breakdown Voltage High Power Dissipation Amplifier and Switching Applications PACKAGE INFORMATION Package MPQ Leader Size B SOT-89 1K 7 inch F ORDER INFORMATION Collector 2 Part Number Type BCP669A BCP669A-C Lead (Pb)-free Lead (Pb)-free and Halogen-free 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) REF.

A B C D E F Parameter Symbol Ratings Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitter-Base Voltage VEBO 5 Collector Current Total Power Dissipation 1 Total Power Dissipation 2 IC PD 1.5 0.6 1 Junction, Storage Temperature Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 2 TJ, TSTG Thermal Data RθJA 150, -55~150 208 125 Thermal Resistance Junction-Case RθJC Notes: 1.

When mounted on Min.

Overview

Elektronische Bauelemente BCP669A 1.5A, 180V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen &.