BCP669A Datasheet (SeCoS Halbleitertechnologie GmbH)

Part BCP669A
Description NPN Epitaxial Planar Transistor
Category Transistor
Manufacturer SeCoS Halbleitertechnologie GmbH
Size 311.78 KB
SeCoS Halbleitertechnologie GmbH

BCP669A Overview

Description

Low Frequency Power Amplifier Designed for General High Breakdown Voltage High Power Dissipation Amplifier and Switching Applications PACKAGE INFORMATION Package MPQ Leader Size B SOT-89 1K 7 inch F ORDER INFORMATION Collector 2 Part Number Type BCP669A BCP669A-C Lead (Pb)-free Lead (Pb)-free and Halogen-free 1 Base 3 Emitter REF. A B C D E F Parameter Symbol Ratings Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitter-Base Voltage VEBO 5 Collector Current Total Power Dissipation 1 Total Power Dissipation 2 IC PD 1.5 0.6 1 Junction, Storage Temperature TJ, TSTG Thermal Data RθJA 150, -55~150 208 125 RθJC Notes: 1.