SeCoS Halbleitertechnologie GmbH BCP669A
NPN Epitaxial Planar Transistor
| Part No. | BCP669A |
|---|---|
| Datasheet | BCP669A Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Epitaxial Planar Transistor |
| Buy | Stock & Price |
DESCRIPTION
Low Frequency Power Amplifier Designed for General High Breakdown Voltage High Power Dissipation Amplifier and SwitchingAPPLICATIONS
PACKAGE INFORMATION Package MPQ Leader Size B SOT-89 1K 7 inch F ORDER INFORMATION Collector 2 Part Number Type BCP669A BCP669A-C Lead (Pb)-free Lead (Pb)-free and Halogen-free 1 Base 3 EmitterABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) REF. A B C D E F Parameter Symbol Ratings Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitter-Base Voltage VEBO 5 Collector Current Total Power Dissipation 1 Total Power Dissipation 2 IC PD 1.5 0.6 1 Junction, Storage Temperature Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 2 TJ, TSTG Thermal Data RθJA 150, -55~150 208 125 Thermal Resistance Junction-Case RθJC Notes: 1. When mounted on Min. copper pad. 2. When mounted on FR-4 PCB with area measuring 15×15×1 mm. 40 SOT-89 123 A EC 4 D G H J Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.55 TYP.