SeCoS Halbleitertechnologie GmbH BCP882J
NPN Transistor
| Part No. | BCP882J |
|---|---|
| Datasheet | BCP882J Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
Small Flat Package. High DC Current Gain Low VCE(sat) CLASSIFICATION OF hFE Rank BCP882J-O BCP882J-Y BCP882J-GR SOT-89 123 A EC 4 1. Base 2. Collector 3. Emitter Range 100~200 160~320 200~400 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch 1 Base B F G H J D K L Collector 2 3 Emitter REF. A B C D E F Millimeter Min. Max. 4.40 3.94 1.40 4.60 4.25 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction and Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 40 30 6 3 500 250 150, -55~150 V V V A mW °C / W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min Typ Collector to Base Breakdown Vol...