SeCoS Halbleitertechnologie GmbH BCP965
The BCP965 is designed for use as AF output amplifier and flash unit.DESCRIPTION
BCP965 NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF.ABSOLUTE MAXIMUM RATINGS
at TA=25oC Symbol VCBO VCEO VEBO IC PD TJ,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10ms) Total Power Dissipation Junction and Storage Temperature Value 40 20 7 5 8 1.2 -55~+150 Units V V V A W COELECTRICAL CHARACTERISTICS
Tamb=25oC unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Cl...