SeCoS Halbleitertechnologie GmbH BCPA94
PNP Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG -400 -400 -5 -200 500 150, -55~150 Unit V V V mA mW °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO -400 - - V IC= -100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -400 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100μA, IC=0 Collector Cut-Off Current ICBO - - -0.1 μA VCB= -400V, IE=0 Collector Cut-Off Current ICEO - - -5 μA VCE= -400V, IB=0 Emitter Cut-Off Current IEBO - - -0.1 μA VEB= -4V, IC=0 hFE (1) 80 - 300 VCE= -10V, IC= -10mA DC Current Gain hFE (2) 70 hFE (3) 60 - - VCE= -10V, IC= -1mA VCE= -10V, IC= -100mA hFE (4) 80 - - VCE= -10V, IC= -...