SeCoS Halbleitertechnologie GmbH BD13003B
NPN Plastic Encapsulated Transistor
FEATURES
Power SwitchingAPPLICATIONS
TO-126 CLASSIFICATION OF tS Product-Rank Range BD13003B-A1 2-2.5 (µs) BD13003B-A2 2.5-3 (µs) 1Emitter 2Collector 3Base MARKING ․13003 ․=Solid dot *Solid dot=Green molding compound device, if none, the normal device. A E F N L M K B H C D ORDER INFORMATION Part Number Type Collector 2 G J BD13003BBD13003B- -C Lead (Pb)-free Lead (Pb)-free and Halogen-free 1 Base * =Rank 3 EmitterABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 Parameter Symbol Ratings Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction and Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 700 400 9 1.5 1.5 150, -55~150 V V V A W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min.