SeCoS Halbleitertechnologie GmbH BD439
Plastic Encapsulate Transistors
| Part No. | BD439 |
|---|---|
| Datasheet | BD439 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | Plastic Encapsulate Transistors |
| Buy | Stock & Price |
FEATURES
* Amplifier and switching applications 3.2±0.2 1.4±0.1 oMAXIMUM RATINGS
* TA=25 C unless otherwise noted 1.27±0.1 15.3±0.2 0.76±0.1 2.28 Typ. Symbol VCBO Paramete Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature BD439 BD441 BD439 BD441 Value 60 80 60 80 5 4 1.25 150 -55-150 Units V V V A W o VCEO 4.55±0.1 0.5± 0.1 VEBO IC PC TJ Tstg 1: Emitter 2: Collector 3: Base C C Dimensions in Millimeters oELECTRICAL CHARACTERISTICS
（Tamb=25℃ Parameter Collector-base breakdown voltage Symbol V(BR)CBO Test unless otherwise specified） MIN TYP MAX UNIT V conditions BD439 BD441 Ic=100μA,IE=0 60 80 60 80 5 Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) Ic=100mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VCB=80V,IE=0 VEB=5V,IE=0 VCE=1V,IC=500mA VCE=5V,IC=10mA VCE=1V,IC=2A IC=3A,IB=0.3A VCE=...