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BL814 - Phototransistor Photocoupler

General Description

The BL814 series of devices each consist of an infrared Emitting diodes, optically coupled to a phototransistor detector.

They are packaged in a 4-pin DIP package and available in Wide-lead spacing and SMD option.

Key Features

  • Current transfer ratio (CTR:20%-300% at IF=1mA,VCE=5V) High isolation voltage between input and output (Viso = 5000V rms) Creepage distance > 7.62mm UL/CUL Approved (File No. E340048) DIP4 A B Top View N D F LH M C JE K.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente BL814 0.05A , 80V , 150mW 4 Pin DIP Phototransistor Photocoupler RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The BL814 series of devices each consist of an infrared Emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in Wide-lead spacing and SMD option. FEATURES Current transfer ratio (CTR:20%-300% at IF=1mA,VCE=5V) High isolation voltage between input and output (Viso = 5000V rms) Creepage distance > 7.62mm UL/CUL Approved (File No. E340048) DIP4 A B Top View N D F LH M C JE K APPLICATIONS Programmable controllers System appliances, measuring instruments Telecommunication equipments Home appliances, such as fan heaters, etc.