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BL814 Datasheet PDF

SeCoS Halbleitertechnologie GmbH BL814

The BL814 series of devices each consist of an infrared Emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in Wide-lead spacing and SMD option.
Part No. BL814
Datasheet BL814 Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description Phototransistor Photocoupler
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BL814 datasheet page 1 preview

DESCRIPTION

FEATURES

Current transfer ratio (CTR:20%-300% at IF=1mA,VCE=5V) High isolation voltage between input and output (Viso = 5000V rms) Creepage distance > 7.62mm UL/CUL Approved (File No. E340048) DIP4 A B Top View N D F LH M C JE K

APPLICATIONS

Programmable controllers System appliances, measuring instruments Telecommunication equipments Home appliances, such as fan heaters, etc. Signal transmission between circuits of different potentials and impedances REF. Millimeter Min. Max. REF. Millimeter Min.. Max A 6.30 6.70 H 2.60 3.00 B 4.40 4.80 J 0.20 0.30 C 7.9 8.3 K 8.65 9.35 D 3.20 3.75 L 0.50 TYP. E 2° 8° M 2.40 2.70 F 1.25 TYP. N 0.40 TYP.

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Input Forward Current Peak forward current(t=10us) Power dissipation Derating factor(above 100°C) IF IFM PD ±50 mA 1A 70 mW 2.9 mW / °C Output Collector-Emitter Voltage Emitter-Collector Voltage Power dissipation Derating factor(above 100°C) VCEO VE...
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