SeCoS Halbleitertechnologie GmbH C945T
NPN Silicon Transistor
FEATURES
Low noise Excellent hFE linearity Complementary to A733T RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5V Collector Current Continuous IC 150 mA Collector Power Dissipation PC 400 mW Junction, Storage Temperature TJ, TSTG 125, -55~125 °C 1 2 3 12 3 1. EMITTER 2. COLLECTOR 3. BASSELECTRICAL CHARACTERISTICS
(Tamb = 25 °C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO IC = 1mA, IE = 0 IC = 100μA, IB = 0 IE = 100mA, IC = 0 60 50 5 Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain ICBO ICEO IEBO hFE(1) hFE(2) VCB = 60V, IE = 0 VCE = 45V VEB = 5V, IC = 0 VCE = 6V, IC = 1mA VCE = 6V, IC = 0.1m...