SeCoS Halbleitertechnologie GmbH CZD1182
General Purpose Transistor
| Part No. | CZD1182 |
|---|---|
| Datasheet | CZD1182 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | General Purpose Transistor |
| Buy | Stock & Price |
FEATURES
● Designed for general● Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank CZD1182-Q Range 120~270 CZD1182-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch Collector Base
● Emitter
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction and Storage Temperature Range VCBO VCEO VEBO IC PC TJ ,TSTG -40 -32 -5 -2 1.5 150 , -55~150 GE K HF MJ N O P REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.35 6.8 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 Unit V V V A W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage V(BR)CBO -40 - - Collector-emitter breakdown voltage V (BR)CE...