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CZD1386 Datasheet PDF

SeCoS Halbleitertechnologie GmbH CZD1386

CZD1386 is designed for low frequency applications.
Part No. CZD1386
Datasheet CZD1386 Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description PNP Epitaxial Silicon Transistor
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CZD1386 datasheet page 1 preview

DESCRIPTION

TO-252 (D-Pack)

FEATURES

Low VCE(sat) Excellent DC current gain characteristics MARKING B1412 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch CLASSIFICATION OF hFE1 Rank P Range 82 - 180 Q 120 - 270 R 180 - 390 1 Base

ABSOLUTE MAXIMUM RATINGS

(TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current Pulsed Collector Current 1 IC IC Total Power Dissipation PC Junction and Storage Temperature TJ, TSTG A BC D GE Collector 2 K HF MJ N O P REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.35 6.90 J 2.336 REF. B 4.95 5.50 K 0.89 REF. C 2.10 2.50 M 0.50 1.14 D 0.665 Typ. N 1.55 Typ. E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20 3 Emitter Rating -30 -20 -6 -5 -10 20 150, -55 ~ 150 Unit V V V A A W °C CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Collector-Base Breakdown Voltage V(BR)CBO -30 Colle...
CZD1386 page 2 preview