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CZD2983J Datasheet PDF

SeCoS Halbleitertechnologie GmbH CZD2983J

CZD2983J is designed for power amplifier and driver stage amplifier applications.
Part No. CZD2983J
Datasheet CZD2983J Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description NPN Epitaxial Planar Silicon Transistor
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CZD2983J datasheet page 1 preview

DESCRIPTION

D-Pack (TO-252)

FEATURES

High transition frequency CLASSIFICATION OF hFE Product-Rank CZD2983J-O Range 70~140 PACKAGE INFORMATION Package MPQ TO-252 2.5K A BC D CZD2983J-Y 120~240 Leader Size 13 inch 1 Base GE Collector 2 3 Emitter K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.186 2.386 B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20

ABSOLUTE MAXIMUM RATINGS

(TA=25°C unless otherwise noted) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Collector Power Dissipation PC Thermal Resistance from Junction to Ambient RθJA Junction and Storage Temperature TJ, TSTG Rating 160 160 5 1.5 1 125 150, -55~150 Unit V V V A W °C/W °C

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Vo...
CZD2983J page 2 preview