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CZD5103 - NPN Epitaxial Planar Silicon Transistor

General Description

The CZD5103 is designed for high speed switching applications.

Key Features

  • Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A High speed switching, typically Tf = 0.1s at IC= 3A Wide SOA Complements to CZD1952 K M J HF N O P GE A B C D.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CZD5103 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor DESCRIPTION The CZD5103 is designed for high speed switching applications. www.DataSheet4U.net D-Pack (TO-252) FEATURES     Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A High speed switching, typically Tf = 0.1s at IC= 3A Wide SOA Complements to CZD1952 K M J HF N O P GE A B C D MARKING 5103  1 Collector  REF. Date Code  Base  Emitter A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.