SeCoS Halbleitertechnologie GmbH CZT32C
PNP Silicon Medium Power Transistor
FEATURES
Complementary to CZT31C Power amplifier applications up to 3 Amps. MARKING CZT32C PACKAGE INFORMATION Package MPQ SOT-223 2.5K Leader Size 13 inch SOT-223 A M Top View C B KL E 1 2 3 D F GH 4 J REF. A B C D E F Millimeter Min. Max. 5.90 6.70 6.70 7.30 3.30 3.80 1.42 1.90 4.45 4.75 0.60 0.85 REF. G H J K L M Millimeter Min. Max. - 0.18 2.00 REF. 0.20 0.40 1.10 REF. 2.30 REF. 2.80 3.20ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO -100 -100 -5 Collector Current-Continuous Collector Power Dissipation IC -3 PD -1 Junction and Storage Temperature TJ, TSTG 150, -65~150 Unit V V V A W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-Base Breakdown Voltage V(BR)CBO -100 - - Collector-Emitter Breakdown Voltage V(BR)CEO -100 - - Emitter-Base Breakdown Voltage V(BR)EBO -5 - - Collector Cut-off Current...