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D669 - NPN Transistors

Datasheet Summary

Features

  • Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2.2±0.1 15.5±0.2 1.27±0.1 0.76±0.1 4.58±0.1 2.29 Typ. 0.5± 0.1 1: Emitter 2: Collector 3: Base Dimens ions in Millimeters.

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Datasheet Details

Part number D669
Manufacturer SeCoS
File Size 231.44 KB
Description NPN Transistors
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2SD669/2SD669A Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C FEATURES Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2.2±0.1 15.5±0.2 1.27±0.1 0.76±0.1 4.58±0.1 2.29 Typ. 0.5± 0.
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