SeCoS Halbleitertechnologie GmbH EMZ1
Dual Transistors
FEATURES
2SA1037AK and 2SC2412K are housed independently in a package. Transistor elements independent, eliminating interference. Mounting cost and area can be cut in half. MARKING AND EQUIVALENT CIRCUIT 654 3 21 CBE A B J D CF GH E Z1 123 TR2 TR1 45 6 EB C REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 TR1ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Collector Power Dissipation Junction & Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 60 50 7 0.15 0.15 150, -55~150 V V V A W ℃ TR1 NPNELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector-Base Breakdown Voltage V(BR)CBO 60 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=1mA,...