SeCoS Halbleitertechnologie GmbH KSC2328AL
NPN Plastic Encapsulated Transistor
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Thermal Resistance Junction, Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 30 30 5 2 0.75 167 150, -55~150 1 Emitter Unit V V V A W °C / W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut - Off Current Emitter cut-off current DC Current Gain Collector to Emitter Saturation Voltage Base – Emitter Voltage Collector Output Capacitance Transition Frequency 24-Jun-2014 Rev. A V(BR)CBO 30 - - V IC=100µA, IE=0 V(BR)CEO 30 - - V IC=10mA, IB=0 V(BR)EBO 5 - - V IE=1mA, IC=0 ICBO - - 0.1 µA VCB=30V, IE=0 IEBO - - 0.1 µA VEB=5V, IC=0 hFE 100 - 320 VCE=2V, IC=500mA VCE(sat) - -...