SeCoS Halbleitertechnologie GmbH KSC2383L
NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Rating 1 Emitter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 160 160 6 1 0.75 150, -55~150 Unit V V V A W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut - Off Current Collector Cut - Off Current Emitter cut-off current DC Current Gain Collector to Emitter Saturation Voltage Base – Emitter Voltage Transition Frequency V(BR)CBO 160 - - V IC=100µA, IE=0 V(BR)CEO 160 - - V IC=10mA, IB=0 V(BR)EBO 6 - - V IE=10µA, IC=0 ICBO - - 1 µA VCB=150V, IE=0 ICER - - 10 µA VCB=150V, REB=10MΩ IEBO - - 1 µA VEB=6V, IC=0 60 - 320 hFE 40 - - VCE=5V, IC=200mA VCE=5V, IC=10mA VCE(sat) - - 1 V IC=500mA, IB=50mA VBE - - 0.75 V VCE=5V, IC=5mA fT - 20 - MHz VCE=5V, IC=200mA 15-Sep -2014 Rev.