SeCoS Halbleitertechnologie GmbH MJD32C
PNP Epitaxial Silicon Transistor
| Part No. | MJD32C |
|---|---|
| Datasheet | MJD32C Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
DESCRIPTION
Designed for General Purpose Amplifier and Low Speed SwitchingAPPLICATIONS
Lead Formed for Surface MountAPPLICATIONS
in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series TO-252 (D-Pack) A BC D PACKAGE INFORMATION Package MPQ Leader Size GE TO-252 2.5K 13 inch Collector 2 1 Base 3 EmitterABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.41 0.9 N 1.55 Typ. E6 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.4 H 0.6 6.4 1.2 Rating Unit Collector to Base Voltage VCBO -100 V Collector to Emitter Voltage Emitter to Base Voltage VCEO VEBO -100 -5 V V Collector Current Collector Power Dissipation Junction and Storage Temperature IC PC TJ, TSTG -3 1.25 150, -65 ~ 150 A W °C CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min.