SeCoS Halbleitertechnologie GmbH MMBD4448F
Plastic-Encapsulated Switching Diode
DESCRIPTION
Fast switching speed For general purpose switching applications High conductance Surface mount package ideally suited for automatic insertion K A L 3 3 Top View 1 2 C B 1 2 E D MARKING: KA3 3 F G H J REF. A B C D 1 2 Millimeter Min. Max. 1.05 REF. 0.20 REF. 0.80 1.00 0.25 0.40 REF. E F G H Millimeter Min. Max. 0.080 0.180 1.15 1.45 1.60 1.80 2.30 2.70ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) PARAMETER Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Storage Temperature @ t = 1.0µs @ t = 1.0s SYMBOL VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA TSTG VALUE 100 75 75 75 53 500 250 4.0 1.5 200 625 -65~150 UNIT V V V V V mA mA A mW ° C/ W ° CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) PARAMETER Forward Voltage SYMBOL VF1 VF2 VF3 VF4 IR1 IR2 CT tRR MIN.