MMDT4403 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente PNP Silicon Multi-Chip Transistor RoHS pliant Product SOT-363 - Features Power dissipation. PCM : 0.2 W (Temp.=25OC) Collector current ICM : - 0.6 A Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55OC ~ +150OC C2 B1 E1 E2 B2 C1 Marking : K2T .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS˄Tamb=25ćunless otherwise...