SeCoS Halbleitertechnologie GmbH MMDT4413
NPN - PNP Plastic-Encapsulated Transistors
FEATURES
z Complementary Pair z Epitaxial Planar Die Construction z Ideal for Low Power Amplification and Switching MARKING K13 EQUIVALENT CIRCUIT .055(1.40) .047(1.20) SOT-363 .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Dimensions in inches and (millimeters)ABSOLUTE MAXIMUM RATINGS
at Ta = 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance. Junction to Junction & Storage temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG NPN Ratings PNP Ratings 60 -40 40 -40 6 -5 0.6 -0.6 0.2 0.2 625 625 150, -55~150 Un