MPSA13
FEATURES
MPSA13 / 14
NPN Epitaxial Silicon Transistor
Ro HS pliant Product A suffix of "-C" specifies halogen & lead-free
TO-92
Darlington TRANSISTOR
Power dissipation
PCM:
0.625 W (Tamb=25℃)
Collector current
ICM: 0.5 Collector-base voltage
V(BR)CBO:
30 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1 23
1 23
1. EMITTER 2. BASE 3 . COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency
Symbol
Test conditions
V(BR)CBO
Ic= 100µA, IE=0
V(BR)CEO
IC= 1m A , IB=0
V(BR)EBO
IE= 100µA, IC=0
ICBO VCB= 30V, IE=0
IEBO HFE(1)
- HFE(2)
- VCE(sat)
- VEB= 10V, IC=0
VCE=5V, IC=10m A
MPSA13 MPSA14
VCE=5V, IC=100m A MPSA13 MPSA14
IC= 100m A, IB=0.1 m...
