SeCoS Halbleitertechnologie GmbH MPSA13
NPN Epitaxial Silicon Transistor
| Part No. | MPSA13 |
|---|---|
| Datasheet | MPSA13 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 Darlington TRANSISTOR Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 Collector-base voltage A V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 23 1 23 1. EMITTER 2. BASE 3 . COLLECTORELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol Test conditions V(BR)CBO Ic= 100µA, IE=0 V(BR)CEO IC= 1mA , IB=0 V(BR)EBO IE= 100µA, IC=0 ICBO VCB= 30V, IE=0 IEBO HFE(1) * HFE(2) * VCE(sat) * VEB= 10V, IC=0 VCE=5V, IC=10mA MPSA13 MPSA14 VCE=5V, IC=100mA MPSA13 MPSA14 IC= 100mA, IB=0.1 mA VBE(on) *
