DESCRIPTION
RoHS Compliant Product PZT3906 PNP Transistor Epitaxial Planar Transistor SOT-223 3906 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 ABSOLUTE MAXIMUM RATINGS
Tamb =25oC, unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -40 -5 IC Collector Current -200 PD Total Power Dissipation 1.5 TJ,Tstg Junction and Storage Temperature -55~+150 Units V V V mA W CO ELECTRICAL CHARACTERISTICS
Tamb=25oC unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO *BVCEO BVEBO ICES IEBO *VCE(sat)1...
SeCoS Halbleitertechnologie GmbH
