DESCRIPTION
RoHS Compliant Product PZT559 PNP Silicon Planar High Current Transistor SOT-223 FEATURES
* Excellent Gain Characteristic Specified Up To 3 Amps. * 4 Amps Continuous Current, Up To 10 Amps Peak Current * Very Low Saturation Voltages 559 MAXIMUM RATINGS
* (Tamb =25oC, unless otherwise specified) REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -4 A ICM Collector Current (Pulse) -10 A PD Total Power Dissipation 3W TJ,Tstg Junction and Storage Temperature -55~+150 CO *The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min.. ELECTRICAL CHARACTERISTICS
Tamb=25oC unless otherwise specified Parameter Symbol Min Typ.
SeCoS Halbleitertechnologie GmbH
