DESCRIPTION
PZT987A PNP Silicon Planar Medium Power High Gain Transistor RoHS Compliant Product SOT-223 FEATURES
* Gain Of 200 At Ic=2A And Very Low Saturation Voltage 9 8 7A REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 MAXIMUM RATINGS
* (Tamb =25oC, unless otherwise specified) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICM Collector Current (Pulse) Value -25 -25 -5 -3 -6 Units V V V A A PD Total Power Dissipation 2W TJ,Tstg Junction and Storage Temperature -55~+150 CO *The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min.. ELECTRICAL CHARAC
SeCoS Halbleitertechnologie GmbH
