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PZT987A - PNP Silicon Planar Medium Power High Gain Transistor

General Description

The PZT987A is designed for battery powered circuits and fast charge converters.

Key Features

  • Gain Of 200 At Ic=2A And Very Low Saturation Voltage 9 8 7A REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente Description The PZT987A is designed for battery powered circuits and fast charge converters. PZT987A PNP Silicon Planar Medium Power High Gain Transistor RoHS Compliant Product SOT-223 Features * Gain Of 200 At Ic=2A And Very Low Saturation Voltage 9 8 7A REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.