S2N7002K Description
Elektronische Bauelemente S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET.
S2N7002K Key Features
- Gate Pretection Diode
- 0.18 0.40 0.60 0.08 0.20
- Source Voltage
- Source Voltage
- 10 25 pF
- 3.0 5.0
- Td(OFF)
- 12 20 nS
- Pulse width ≦300µS, Duty cycle≦1%