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Elektronische Bauelemente
S2N7002K
115mA, 60V N-Channel Enhancement Mode Power MOSFET
FEATURES
Low on resistance. Fast switching speed. Low-voltage drive. Easily designed drive circuits. Easy to parallel. Pb-Free package is available. ESD protected:2000V
DEVICE MARKING: RK
RoHS Compliant Product A Suffix of ā-Cā specifies halogen & lead-free
3 DRAIN
1 GATE
*
* Gate Pretection Diode
SOURCE 2
SOT-23
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50
REF.
G H J K L
Millimeter Min. Max.
- 0.18 0.40 0.60 0.08 0.20
0.6 REF. 0.85 1.