Download SBL20U120F Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SBL20U120F
SBL20U120F is Low VF Trench MOS Barrier Schottky Rectifier manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente Voltage 120V 20.0 Amp Low VF Trench MOS Barrier Schottky Rectifier Ro HS pliant Product A suffix of “-C” specifies halogen free ITO-220 Features Trench MOS Schottky technology Low forward voltage drop Low reverse current High current capability High reliability High surge current capability Epitaxial construction MECHANICAL DATA Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: Lead solderable per MIL-STD-202 method 208 guaranteed Polarity: As Marked Mounting position: Any Weight: 1.98 g (Approximate) REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.90 2.34 2.74 2.40 3.00 φ 3.0 φ 3.4 REF. A B C D E F G 1 3 Millimeter Min. Max. 14.60 15.70 9.50 10.50 12.60 14.00 4.30 4.70 2.30 3.2 2.30 2.90 0.30 0.75 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25° C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Parameter Maximum Recurrent Peak Reverse Voltage Working Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Voltage Rate of Chance (Rated VR) Typical Thermal Resistance Operating and Storage Temperature Range (Per Leg) (Per Device) Symbol VRRM VRSM VDC IF IFSM dv/dt RθJC TJ,TSTG Rating 120 120 120 10 20 150 10000 4 -40~150 Unit V V V A A V / µs ° C /W ° C Peak Forward Surge Current, 8.3 ms single half sine-wave ELECTRICAL CHARACTERISTICS Parameter Maximum Instantaneous Forward Voltage Maximum DC Reverse Current 2 at Rated DC Blocking Voltage Typical Junction Capacitance Symbol Typ. 0.66 0.71 0.8 0.65 210 Max. 0.7 0.75 0.85 0.1...