SBL20U120F
SBL20U120F is Low VF Trench MOS Barrier Schottky Rectifier manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente Voltage 120V 20.0 Amp Low VF Trench MOS Barrier Schottky Rectifier
Ro HS pliant Product A suffix of “-C” specifies halogen free
ITO-220
Features
Trench MOS Schottky technology Low forward voltage drop Low reverse current High current capability High reliability High surge current capability Epitaxial construction
MECHANICAL DATA
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: Lead solderable per MIL-STD-202 method 208 guaranteed Polarity: As Marked Mounting position: Any Weight: 1.98 g (Approximate)
REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.90 2.34 2.74 2.40 3.00 φ 3.0 φ 3.4
REF. A B C D E F G
1 3
Millimeter Min. Max. 14.60 15.70 9.50 10.50 12.60 14.00 4.30 4.70 2.30 3.2 2.30 2.90 0.30 0.75
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25° C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.)
Parameter
Maximum Recurrent Peak Reverse Voltage Working Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Voltage Rate of Chance (Rated VR) Typical Thermal Resistance Operating and Storage Temperature Range (Per Leg) (Per Device)
Symbol
VRRM VRSM VDC IF IFSM dv/dt RθJC TJ,TSTG
Rating
120 120 120 10 20 150 10000 4 -40~150
Unit
V V V A A V / µs ° C /W ° C
Peak Forward Surge Current, 8.3 ms single half sine-wave
ELECTRICAL CHARACTERISTICS
Parameter
Maximum Instantaneous Forward Voltage Maximum DC Reverse Current 2 at Rated DC Blocking Voltage Typical Junction Capacitance
Symbol
Typ.
0.66 0.71 0.8 0.65 210
Max.
0.7 0.75 0.85 0.1...