SeCoS Halbleitertechnologie GmbH SCS202NF
Dual Series Chips Surface Mount Switching Diode
FEATURES
Four types of packaging are available. High speed. (trr=1.5ns Typ.) Suitable for high packing density layout. High reliability. 1 Top View 2 B S G C H K J Construction Silicon epitaxial planar SOT-323(SC-70) Dim Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420MAXIMUM RATINGS
(EACH DIODE) Rating Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current 1uS Power dissipation (TOTAL) Junction temperature Storage temperature Symbol V RM VR I FM Io I surge Pd Tj T stg Value 80 80 300 100 4 200 150 -55~+155 A Unit V V mA mA A mW ºC ºC B C D G H J K L S V All Dimension in mmELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit Forward voltage (IF = 100mA) VF ¡Ð 1.2 V Reverse current (VR = 70V) IR ¡Ð 0.1 uA Capacitance between terminals (V=6V, f=1MHz) CT ¡Ð 3.5 pF Reverse recovery time (IF=5mA,VR=6V) t rr ¡Ð 4 nS 1.