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SDT9A5P02 - P-Channel Enhancement Mode Power MOSFET

General Description

The SDT9A5P02 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The SDT9A5P02 meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SDT9A5P02 -9.5A, -20V, RDS(O ) 24mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SDT9A5P02 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT9A5P02 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 9A5P02 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0.80 1.