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SGM0410-C - N-Channel Enhancement Mode Power MOSFET

General Description

The SGM0410-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SGM0410-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SGM0410-C 3.5A, 100V, RDS(ON) 170m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SGM0410-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SGM0410-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced high cell density Trench technology  Super Low Gate Charge  Green Device Available MARKING 0410   = Date Code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch SOT-89 REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.55 TYP.