SeCoS Halbleitertechnologie GmbH SGM0410-C
The SGM0410-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SGM0410-C meet the RoHS and Green Product requirement with full function reliability approved.| Part No. | SGM0410-C |
|---|---|
| Datasheet | SGM0410-C Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Advanced high cell density Trench technology● Super Low Gate Charge
● Green Device Available MARKING 0410 = Date Code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch SOT-89 REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.55 TYP. 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP. 3.00 TYP. 0.32 0.52 0.35 0.44 Mounting Pad Layout ORDER INFORMATION Part Number Type SGM0410-C Lead (Pb)-free and Halogen-free D G
● S
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current 1 @VGS=10V ID TA=70°C Pulsed Drain Current 3 IDM Power Dissipation TA=25°C PD Operating Junction & Storage Temperature TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction-Ambient 1 RθJA Maximum Thermal Resistance from Junction-Ambient 2 Maximum Thermal Resistance from Junction-Case 1 04-Jan-2022 Rev.
