Datasheet4U Logo Datasheet4U.com

SID05N10 - N-Channel Enhancement Mode Power MOSFET

General Description

The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount applications.

The device is suited for charger, industrial and consumer environment.

Key Features

  • Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SID1003 (SID300 / SID1003) 5phi Round Infrared LED SANKEN
SID1003BQ Infrared LEDs Sanken electric
SID1010CM Infrared LEDs Sanken electric
SID1010CXM Infrared LEDs Sanken electric
SID1050CM LED Sanken

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SID05N60J N-Channel MOSFET
SID04N60-C N-Channel MOSFET
SID04N65SL N-Ch Enhancement Mode Power MOSFET
SID15N10 N-Channel MOSFET
SID40N03 N-Channel Enhancement Mode PowerMos FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SID05N10 5A , 100V , RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen-free DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. TO-251 FEATURES Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel MARKING: 05N10 Date code 1 Gate 2 Drain 3 Source A B GE K F C D H MJ P REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55 6.80 7.20 7.20 7.80 REF.