SM2100MH Datasheet | SeCoS Halbleitertechnologie GmbH

FEATURES z z z z z z z z Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. Low profile surface mounted application. in order to optimize board space. Low power loss and low forward voltage drop High surge, high current capability, and high efficiency. Fast switching for high efficiency. Guard-ring for overvoltage protection. Ultra high-speed switching Silicon epitaxial planar chip, metal silicon junction. SOD-123MH A B F D C PACKAGING INFORMATION z z z z Small plastic SMD package. Case: Molded plastic Epoxy: UL94-V0 rate flame retardant Weight: 0.0110 g (Approximately) REF. Cathode Anode Millimeter Min. Max. 3.30 3.70 1.40 1.80 0.60 1.00 REF. D E F Millimeter Min. Max. 3.10 (MAX.) 0.80 (TYP.) 0.30 (TYP.) MARKING CODE Part Number SM220MH SM230MH SM240MH SM250MH Marking Code 22 23 24 25 Part Number SM260MH SM280MH SM2100MH Marking Code 26 28 20 .Data Sheet.net/ MAXIMUM RATINGS (Ta = 25°C unless otherwise specified.) PART NUMBERS PARAMETERS Recurrent Peak Reverse Voltage (Max.) RMS Voltage (Max.) Reverse Voltage (Max.) Forward Voltage (Max.) Forward Rectified Current (Max.) Peak Forward Surge Current SYMBOL SM 220 MH SM 230 MH SM 240 MH SM 250 MH SM 260 MH SM 280 MH SM 2100 MH UNITS TESTING CONDITIONS VRRM VRMS VR VF IO 20 14 20 30 21 30 0.50 40 28 40 50 35 50 0.70 2.0 60 42 60 80 56 80 100 70 100 0.85 V V V V A See Fig.1 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 40 0.5 10 85 160 -65 ~ 175, -55 to 125 -65 ~ 175, -55 to 150 Reverse Current (Max.) Thermal Resistance (Typ.) Diode Junction Capacitance (Typ.) Storage and Operating Temperature Range IR RθJA CJ TSTG, TJ m A °C/W p F °C VR=VRRM, Ta=25°C VR=VRRM, Ta=125°C Junction to ambient f=1MHz and applied 4V DC reverse...