SMS8820 Overview
SMS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.
| Part number | SMS8820 |
|---|---|
| Datasheet | SMS8820-SeCoS.pdf |
| File Size | 147.15 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | N-CHANNEL MOSFET |
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SMS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.
See all SeCoS Halbleitertechnologie GmbH datasheets
| Part Number | Description |
|---|---|
| SMS840 | P-Channel MOSFET |
| SMS123 | N-Channel MOSFET |
| SMS123Y-C | N-Channel MOSFET |
| SMS2001-C | P-Channel MOSFET |
| SMS2002-C | N-Ch Enhancement Mode Power MOSFET |
| SMS2009E-C | N-Channel MOSFET |
| SMS2012-C | N-Ch Enhancement Mode Power MOSFET |
| SMS2301 | P-Channel Enhancement Mode Power MOSFET |
| SMS2301-C | P-Channel Enhancement Mode Power MOSFET |
| SMS2301Y-C | P-Channel Enhancement Mode Power MOSFET |