MAXIMUM RATINGS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol V CBO V CEO IC Value 50 50 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature Symbol PD R JA Symbol PD R θJA R θJL T J , T stg Max Note 1 Note 2 187 256 1.5 2.0 670 490 Max Note 1 Note 2 250 385 2.0 3.0 493 325 188 208 –55 to +150 Unit mW mW/°C °C/W Unit mW mW/°C °C/W °C/W °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad 22-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 1 of 8 Elektronische Bauelemente SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor DEVICE...
SeCoS Halbleitertechnologie GmbH
