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SSD12P10 Datasheet PDF

SeCoS Halbleitertechnologie GmbH SSD12P10

The pulse width is limited by the safe operating area.
Part No. SSD12P10
Datasheet SSD12P10 Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description P-Channel Enhancement Mode Power MosFET
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SSD12P10 datasheet page 1 preview

DESCRIPTION

SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-252 package is universally preferred for all commercial-industrial surface mount applications. TO-252(D-Pack)

FEATURES

Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant MARKING 12P10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 1 Gate 2 Drain 3 Source A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.336 REF. B 4.95 5.50 K 0.89 REF. C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20

ABSOLUTE MAXIMUM RATINGS

(TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current @VGS=10V ID TC=100°C Pulsed Drain Current 1 IDM Total Power Dissipation TC=25°C PD Operating Junction and Storage Temperat...
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