SeCoS Halbleitertechnologie GmbH SSG3624-C
The SSG3624-C is the high cell density trenched dual N-Ch MOSFETs, which provides excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG3624-C meets the RoHS and Green Product requirement with full function reliability approved.| Part No. | SSG3624-C |
|---|---|
| Datasheet | SSG3624-C Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | Dual N-Ch Fast Switching MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
Super Low Gate Charge High Speed Power Switching Green Device Available Advanced High Cell Density Trench Technology MARKING 3624 = Date Code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSG3624-C Lead (Pb)-free and Halogen-free SOP-8 B A H G LD M C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.33 0.51 0.375 REF. 45°REF. 1.30 1.752 0 0.25 0.25 REF. S D G D S D G DABSOLUTE MAXIMUM RATINGS
Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current 1 @VGS=10V ID TA=70°C Pulsed Drain Current 2 IDM Total Power Dissipation 3 TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 RθJA Thermal Resistance Junction-Case 1 RθJC Ratings 30 ±20 9 7 36 1.5 -55~150 85 25 Unit V V A A W °C °C/W 13-Oct-2020 Rev. A Any changes of specification will not be informed individually.
