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SSG4224 - N-Ch Enhancement Mode Power MOSFET

General Description

The SSG4224 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dual N MOSFET Package.
  • Simple Drive Requirement.
  • Low On-Resistance D1 D1 D2 D2 8 765 Date Code 4224SS 123 4 S1 G1 S2 G2 SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 45o 0.375 REF 3.80 4.00 0.35 1.27Typ. 0.49 4.80 0.100.25 5.00 0o 1.35 1.75 8o Dimensions in millimeters D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Der.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSG4224 10A,30V,RDS(ON) 14m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSG4224 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features * Dual N MOSFET Package * Simple Drive Requirement * Low On-Resistance D1 D1 D2 D2 8 765 Date Code 4224SS 123 4 S1 G1 S2 G2 SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 45o 0.375 REF 3.80 4.00 0.35 1.27Typ. 0.49 4.80 0.100.25 5.00 0o 1.35 1.