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SSG4401P Datasheet PDF

SeCoS Halbleitertechnologie GmbH SSG4401P

P-Ch Enhancement Mode Power MOSFET

Part No. SSG4401P
Datasheet SSG4401P Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description P-Ch Enhancement Mode Power MOSFET
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SSG4401P datasheet page 1 preview

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13’ inch SOP-8 B A H G LD M C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D

MAXIMUM RATINGS

(TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 TA = 25°C...
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