SSG4401P Description
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SSG4401P Key Features
- 55 ~ 150
- 3.6 A, -150 V, RDS(ON) 160 mΩ P-Ch Enhancement Mode Power MOSFET
- S VDS= -15V, ID= -2.8A
- V IS= -2.1A, VGS=0
- VDS=-15V
- pF VGS=0
- Total Gate Charge Gate-Source Charge Gate-Drain Charge
- ID= -2.8A
- nC VDS= -75V
- VGS= -4.5V