Download SSG4930N Datasheet PDF
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SSG4930N Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.

SSG4930N Key Features

  • Low RDS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe SOP-8 saves board space
  • Fast switching speed
  • High performance trench technology
  • 55 ~ 150
  • Drain-Source On-Resistance 1 Forward Transconductance 1
  • 0.7 Dynamic 2
  • 1.9 Ciss
  • Fall Time

SSG4930N Applications

  • Low RDS(on) provides higher efficiency and extends battery life